Ion energy distribution function measurements by laser-induced fluorescence in a dual radio frequency sheath
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چکیده
منابع مشابه
Ion energy distribution function measurements by laser-induced fluorescence in a dual radio frequency sheath
Ion dynamics are investigated in a dual frequency radio frequency sheath as a function of radius above a 30 cm diameter biased silicon wafer in an industrial inductively coupled (440 kHz, 500 W) plasma etch tool. Ion velocity distribution (IVD) function measurements in the argon plasma are taken using laser induced fluorescence. Planar sheets of laser light enter the chamber both parallel and p...
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The ion velocity distribution function (IVDF) above and within a radio-frequency (RF) biased plasma sheath is studied experimentally with a pulsed laser-induced fluorescence diagnostic in an industrial plasma etch tool. Temporally resolved measurements taken at eight different phases of the 2.2 MHz bias waveform show that the ion dynamics vary dramatically throughout the RF cycle (the ratio of ...
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The time-dependent argon-ion velocity distribution function above and within the plasma sheath of an rf-biased substrate has been measured using laser-induced fluorescence in a commercial plasma processing tool. Discharge parameters were such that the 2.2 MHz rf-bias period was on the order of the ion transit time through the sheath (τ{ion}/τ{rf}=0.3). This work embodies the first time-resolved...
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The dynamics of ions traversing sheaths in low temperature plasmas are important to the formation of the ion energy distribution incident onto surfaces during microelectronics fabrication. Ion dynamics have been measured using laser-induced fluorescence (LIF) in the sheath above a 30 cm diameter, 2.2 MHz-biased silicon wafer in a commercial inductively coupled plasma processing reactor. The vel...
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ژورنال
عنوان ژورنال: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
سال: 2016
ISSN: 0734-2101,1520-8559
DOI: 10.1116/1.4941069